Unchanged thermopower enhancement at the semiconductor-metal transition in correlated FeSbTe
arXiv:1102.0171 · doi:10.1063/1.3556645
Abstract
Substitution of Sb in FeSb by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass . Spanning the entire range of the semiconductor-metal crossover, we observed an almost constant enhancement of the measured thermopower compared to that estimated by the classical theory of electron diffusion. Using the latter for a quantitative description one has to employ an enhancement factor of 10-30. Our observations point to the importance of electron-electron correlations in the thermal transport of FeSb, and suggest a route to design thermoelectric materials for cryogenic applications.
arXiv comment3 pages, 3 figures, accepted for publication in Appl. Phys. Lett. (2011)
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Cited by in corpus (5)
- Thermoelectricity in correlated narrow-gap semiconductors
- Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb
- Enhancement of the thermoelectric properties in doped FeSb bulk crystals
- Metallic surface states in a correlated d-electron topological Kondo insulator candidate FeSb2
- Enhanced electron correlations in FeSb