Field enhanced electron mobility by nonlinear phonon scattering of Dirac electrons in semiconducting graphene nanoribbons
arXiv:1101.5627 · doi:10.1103/PhysRevB.83.115405
Abstract
The calculated electron mobility for a graphene nanoribbon as a function of applied electric field has been found to have a large threshold field for entering a nonlinear transport regime. This field depends on the lattice temperature, electron density, impurity scattering strength, nanoribbon width and correlation length for the line-edge roughness. An enhanced electron mobility beyond this threshold has been observed, which is related to the initially-heated electrons in high energy states with a larger group velocity. However, this mobility enhancement quickly reaches a maximum due to the Fermi velocity in graphene and the dramatically increased phonon scattering. Super-linear and sub-linear temperature dependence of mobility seen in the linear and nonlinear transport regimes. By analyzing the calculated non-equilibrium electron distribution function, this difference is attributed separately to the results of sweeping electrons from the right Fermi edge to the left one through the elastic scattering and moving electrons from low-energy states to high-energy ones through field-induced electron heating. The threshold field is pushed up by a decreased correlation length in the high field regime, and is further accompanied by a reduced magnitude in the mobility enhancement. This implies an anomalous high-field increase of the line-edge roughness scattering with decreasing correlation length due to the occupation of high-energy states by field-induced electron heating.
20 pages and 6 figures
References in corpus (12)
- The electronic properties of graphene
- Graphene photodetectors for high-speed optical communications
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- Charged Impurity Scattering in Graphene
- Electronic States of Graphene Nanoribbons
- Electronic transport in graphene: A semi-classical approach including midgap states
- Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene
- Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering
- Conductance Quantization in Graphene Nanoribbons
- Electronic transport properties of graphene nanoribbons
- Phenomenological study of the electronic transport coefficients of graphene
- Diffusive transport in graphene: the role of interband correlation
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