Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

Abstract

We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.

Submitted to Appl. Phys. Lett

References in corpus (5)

• Coupling Superconducting Qubits via a Cavity Bus
• Demonstration of Two-Qubit Algorithms with a Superconducting Quantum Processor
• Coherent quantum state storage and transfer between two phase qubits via a resonant cavity
• Coplanar Waveguide Resonators for Circuit Quantum Electrodynamics
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Cited by in corpus (7)

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• Photon cross-correlations emitted by a Josephson junction in two microwave cavities
• Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities
• Introduction of DC line structures into a superconducting microwave 3D cavity
• Electrical excitation and detection of magnetic dynamics with impedance matching