Signature of a three-dimensional photonic band gap observed on silicon inverse woodpile photonic crystals

Abstract

We have studied the reflectivity of CMOS-compatible three-dimensional silicon inverse woodpile photonic crystals at near-infrared frequencies. Polarization-resolved reflectivity spectra were obtained from two orthogonal crystal surfaces corresponding to 1.88 pi sr solid angle. The spectra reveal broad peaks with high reflectivity up to 67 % that are independent of the spatial position on the crystals. The spectrally overlapping reflectivity peaks for all directions and polarizations form the signature of a broad photonic band gap with a relative bandwidth up to 16 %. This signature is supported with stopgaps in plane wave bandstructure calculations and with the frequency region of the expected band gap.

9 pages, 5 figures

References in corpus (3)

• Size dependent oscillator strength and quantum efficiency of CdSe quantum dots determined by controlling the local density of states
• The role of fabrication deviations on the photonic band gap of 3D inverse woodpile nanostructures
• Optical characterization and selective addressing of the resonant modes of a micropillar cavity with a white light beam

Cited by in corpus (7)

• Design of a 3D photonic band gap cavity in a diamond-like inverse woodpile photonic crystal
• "Cartesian light": unconventional propagation of light in a 3D superlattice of coupled cavities within a 3D photonic band gap
• Reflectivity of Finite 3D GaAs Photonic Band Gap Crystals
• Enhanced Absorption in thin and ultrathin silicon films by 3D photonic band gap back reflectors
• Observation of light propagation through a three-dimensional cavity superlattice in a 3D photonic band gap
• Dispersion of backward-propagating waves in a surface defect on a 3D photonic band gap crystal
• Symmetries and Wavefunctions of Photons Confined in 3D Photonic Band Gap Superlattices