Theory of carrier concentration-dependent electronic behavior in layered cobaltates
arXiv:1012.3118 · doi:10.1103/PhysRevLett.106.216401
Abstract
A natural explanation for the carrier concentration-dependent electronic behavior in the layered cobaltates emerges within correlated-electron Hamiltonians with finite on-site and significant nearest neighbor hole-hole Coulomb repulsions. The nearest neighbor repulsion decreases hole double-occupancy below hole density 1/3, but increases the same at higher hole densities. Our conclusion is valid for both single-band and three-band extended Hubbard Hamiltonians, and sheds light on concentration-dependent hole occupancy within the latter.
4 pages, 4 figures
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