Reentrant spin-glass behavior in $TlFe_{2-x}Se_2$ with the $ThCr_2Si_2$-type structure

J. J. Ying; A. F. Wang; Z. J. Xiang; X. G. Luo; R. H. Liu; X. F. Wang; Y. J. Yan; M. Zhang; G. J. Ye; P. Cheng; X. H. Chen

paper

Reentrant spin-glass behavior in $T l F e_{2 - x} S e_{2}$ with the $T h C r_{2} S i_{2}$ -type structure

arXiv:1012.2929

Abstract

We investigated the physical properties of $T l F e_{2 - x} S e_{2}$ single crystals. The resistivity of $T l F e_{2 - x} S e_{2}$ shows typical semiconductor behavior with an activation energy of 25 meV. DC susceptibility indicates an antiferromagnetic transition at about 450 K. Reentrant spin-glass (RSG) behavior was found at about 130 K through DC and AC magnetic measurements. The RSG behavior suggests the existence of a strong competition between ferromagnetic (FM) and antiferromagnetic (AFM) interactions due to Fe deficiencies. Strong electron-electron correlation may exist in this material and it is possibly a candidate of parent compound for high $T_{c}$ superconductors.

5 pages, 6 figures, submitted to PRB on 12 Nov 2010

Reentrant spin-glass behavior in TlFe2−x​Se2​ with the ThCr2​Si2​-type structure

Abstract

Reentrant spin-glass behavior in $T l F e_{2 - x} S e_{2}$ with the $T h C r_{2} S i_{2}$ -type structure