High frequency limit for single-electron pumping operations
arXiv:1012.0878
Abstract
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we find that in general the electrical current is not proportional to the frequency of the external signals in the single-electron devices, due to the strong quantum coherence tunneling effect.
4 pages 5 figures