Theoretical investigation of the four-layered self-doped high-T${}_c$ superconductors: evidence of pair tunneling effect

Abstract

Based on a four-layered self-doped $t-J$ type model and the slave-boson mean-field approach, we study theoretically the superconductivity in the electron-doped and hole-doped layers. The neighbor layers are coupled through both the single electron interlayer hopping and pair tunneling effect. The superconducting gap magnitude for the electron-doped band is nearly twice of that of the hole-doped one, which contrasts to our previous understanding of the electron-hole asymmetry in high-T${}_c$ superconductors but consistent with recent angle-resolved-photoemission-spectroscopy experiments in four-layered materials Ba${}_2$Ca${}_3$Cu${}_4$O${}_8$F${}_2$. Our results propose that the pair tunneling effect is important to examine the multi-layered superconducting materials.

Minor Revisions made, accepted for publication in PRL

References in corpus (4)

• Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-Tc Superconductor
• The Electronic States of Two Oppositely doped Mott Insulators Bilayers
• Insights from ARPES for an undoped, four-layered, two-gap high-T_c superconductor
• Coexistence of superconductivity and antiferromagnetism in self-doped bilayer t-t'-J model

Cited by in corpus (1)

• Interlayer Pairing Induced Partially Gapped Fermi Surface in Trilayer La${}_4$Ni${}_3$O${}_{10}$ Superconductors