Full Band Structure Calculation of Two-photon Indirect Absorption in Bulk Silicon

Abstract

Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.

3 pages, 2 figures

References in corpus (1)

• Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors

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