A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells

Abstract

We develop a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, free from additional etching or harsh process, universal to arbitrary substrates, compatible to Si microelectronic technology, can be easily applied to diverse graphene-based devices, especially in array-based applications, where large-scale graphene patterns are desired. We have applied this method to fabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which have potential application in integrated nano-optoelectronic systems. Typical as-fabricated solar cell shows excellent photovoltaic behavior with an open-circuit voltage of ~ 0.51 V, a short-circuit current density of ~ 5.75 mA/cm2, and an energy conversion efficiency of ~1.25%. We attribute the high performance of the cell to the as-patterned high-performance graphene, which can form an ideal Schottky contact with CdSe NB. Our results suggest both the developed graphene patterning method and the as-fabricated CdSe nanobelt (NB)/graphene Schottky junction solar cells have reachable application prospect.

11 pages, 5 figures

References in corpus (6)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
• Ultrahigh electron mobility in suspended graphene
• Etching of Graphene Devices with a Helium Ion Beam
• Quantized Transport in Graphene p-n Junctions in Magnetic Field

Cited by in corpus (3)

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