Defect-induced multicomponent electron scattering in single-walled carbon nanotubes

Abstract

We present a detailed comparison between theoretical predictions on electron scattering processes in metallic single-walled carbon nanotubes with defects and experimental data obtained by scanning tunneling spectroscopy of Ar${}^{+}$ irradiated nanotubes. To this purpose we first develop a formalism for studying quantum transport properties of defected nanotubes in presence of source and drain contacts and an STM tip. The formalism is based on a field theoretical approach describing low-energy electrons. We account for the lack of translational invariance induced by defects within the so called extended kp approximation. The theoretical model reproduces the features of the particle-in-a-box-like states observed experimentally. Further, the comparison between theoretical and experimental Fourier-transformed local density of state maps yields clear signatures for inter- and intra-valley electron scattering processes depending on the tube chirality.

http://link.aps.org/doi/10.1103/PhysRevB.83.165439

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• Confined Electron and Hole States in Semiconducting Carbon Nanotube sub-10 nm Artificial Quantum Dots
• Pseudo-spin-dependent scattering in carbon nanotubes
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