Monte Carlo simulation of growth of hard-sphere crystals on a square pattern

Abstract

Monte Carlo simulations of the colloidal epitaxy of hard spheres (HSs) on a square pattern have been performed. This is an extension of previous simulations; we observed a shrinking intrinsic stacking fault running in an oblique direction through the glide of a Shockley partial dislocation terminating its lower end in fcc (001) stacking [Mori et al., Molec. Phys. 105 (2007) 1377], which was an answer to a question why the defect in colloidal crystals reduced by gravity [Zhu et al., Nature 387 (1997) 883]. We have resolved one of shortcomings of the previous simulations; the driving force for fcc (001) stacking, which was stress from a small periodic boundary simulation box, has been replaced with the stress from a pattern on the bottom. We have observed disappearance of stacking fault in this realizable condition. Sinking of the center of gravity has been smooth and of a single relaxation mode under the condition that the gravitational energy mgd is slightly less than the thermal energy kT. In the snapshots tetrahedral structures have appeared often, suggesting formation of staking fault tetrahedra.

15 pages, 6 figures; 16th International Conference on Crystal Growth; J. Cryst. Growth, in press

References in corpus (1)

• Shrinking stacking fault through glide of the Shockley partial dislocation in hard-sphere crystal under gravity

Cited by in corpus (5)

• Possibility of Gravitational Tempering in Colloidal Epitaxy to Obtain a Perfect Crystal
• Gravitational tempering in colloidal epitaxy to reduce defects further
• Monte Carlo simulation of defects in hard-sphere crystal grown on a square pattern
• Huge broadening of the crystal-fluid interface for sedimenting colloids
• Identification of triangular-shaped defects often appeared in hard-sphere crystals grown on a square pattern under gravity by Monte Carlo simulations