Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes
arXiv:1010.1616 · doi:10.1021/nl8029948
Abstract
A field effect transistor (FET) measurement of a SWNT shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be critical to activate this metal-semiconductor transition in the SWNT-ssDNA hybrid. Raman spectroscopy confirms the same change in electrical behavior. According to our ab initio calculations, a band gap can open up in a metallic SWNT with wrapped ssDNA in the presence of water molecules due to charge transfer.
13 pages, 6 figures