Formation of Hydrogenated Graphene Nanoripples by Strain Engineering and Directed Surface Self-assembly

Abstract

We propose a new class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first principles calculations. They are formed via a two-step combinatorial approach: first by strain engineered pattern formation of graphene nanoripples, followed by a curvature-directed self-assembly of H adsorption. It offers a high level of control of the structure and morphology of the HGNRs, and hence their band gaps which share common features with graphene nanoribbons. A cycle of H adsorption/desorption at/from the same surface locations completes a reversible metal-semiconductor-metal transition with the same band gap.

11 pages, 5 figures

References in corpus (8)

• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Control of graphene's properties by reversible hydrogenation
• Substrate-induced band gap opening in epitaxial graphene
• Ripple Texturing of Suspended Graphene Atomic Membranes
• Graphene to Graphane: A Theoretical Study
• "Narrow" Graphene Nanoribbons Made Easier by Partial Hydrogenation
• A Systematic Study of Electronic Structure from Graphene to Graphane

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• Graphene Nanoribbons Under Axial Compressive and Point Tensile Stresses
• Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields
• Orbital design of topological insulators from two-dimensional semiconductors
• Directed Growth of Hydrogen Lines on Graphene: High Throughput Simulations Powered by Evolutionary Algorithm