dc-switchable and single-nanocrystal-addressable coherent population transfer

Abstract

Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer recipes for the stimulated Raman adiabatic passage in embedded silicon and germanium nanocrystals. The transfer efficiency spectra displays characteristic Fano resonances. By exploiting the Stark effect, we predict that transfer can be switched off with a dc voltage. As the population transfer is highly sensitive to structural variations, with a choice of a sufficiently small two-photon detuning bandwidth, it can be harnessed for addressing individual nanocrystals within an ensemble.

Published version, 4 pages, 3 figures

References in corpus (8)

• Fano resonances in nanoscale structures
• Quantum information with Rydberg atoms
• Coherent Control of Rydberg States in Silicon
• Interband, intraband and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice
• Adiabatic population transfer via multiple intermediate states
• Auger recombination and carrier multiplication in embedded silicon and germanium nanocrystals
• Stimulated Raman Adiabatic Passage in Tm${}^{3+}$:YAG
• Stark effect, polarizability and electroabsorption in silicon nanocrystals

Cited by in corpus (1)

• Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study