Capacitive interaction model for Aharonov-Bohm effects of a quantum Hall antidot

Abstract

We derive a general capacitive interaction model for an antidot-based interferometer in the integer quantum Hall regime, and study Aharonov-Bohm resonances in a single antidot with multiple bound modes, as a function of the external magnetic field or the gate voltage applied to the antidot. The pattern of Aharonov-Bohm resonances is significantly different from the case of noninteracting electrons. The origin of the difference includes charging effects of excess charges, charge relaxation between the bound modes, the capacitive interaction between the bound modes and the extended edge channels nearby the antidot, and the competition between the single-particle level spacing and the charging energy of the antidot. We analyze the patterns for the case that the number of the bound modes is 2, 3, or 4. The results agree with recent experimental data.

9 pages, 6 figures

References in corpus (7)

• Aharonov-Bohm electron interferometer in the integer quantum Hall regime
• Quantum transport in electron Fabry-Perot interferometers
• Electron interactions in an antidot in the integer quantum Hall regime
• Electron interferometry in quantum Hall regime: Aharonov-Bohm effect of interacting electrons
• Electron tunneling spectroscopy of a quantum antidot in the quantum Hall regime
• The quenching of compressible edge states around antidots
• Temperature-dependent screening of the edge state around antidots in the quantum Hall regime