Competition between excitonic gap generation and disorder scattering in graphene
arXiv:1007.4538 · doi:10.1088/1367-2630/13/3/033022
Abstract
We study the disorder effect on the excitonic gap generation caused by strong Coulomb interaction in graphene. By solving the self-consistently coupled equations of dynamical fermion gap and disorder scattering rate , we found a critical line on the plane of interaction strength and disorder strength . The phase diagram is divided into two regions: in the region with large and small , and ; in the other region, and for nonzero . In particular, there is no coexistence of finite fermion gap and finite scattering rate. These results imply a strong competition between excitonic gap generation and disorder scattering. This conclusion does not change when an additional contact four-fermion interaction is included. For sufficiently large , the growing disorder may drive a quantum phase transition from an excitonic insulator to a metal.
8 pages, 1 figure
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