Controllable, driven phase transitions in the Fractional quantum Hall states in bilayer graphene

Abstract

Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the bandgap at a given electron density. The nature of such phase transitions is different for weak and strong inter-layer coupling. Although for strong coupling more levels interact there are lesser number of transitions than for the weak coupling case. The intriguing scenario of tunable phase transitions in the fractional quantum Hall states is unique to bilayer graphene and never before existed in conventional semiconductor systems.

References in corpus (6)

• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Electron interactions in graphene in a strong magnetic field
• The Fractional Quantum Hall States of Dirac Electrons in Graphene
• Long range Coulomb interaction in bilayer graphene

Cited by in corpus (11)

• The electronic properties of bilayer graphene
• Tunable Fractional Quantum Hall Phases in Bilayer Graphene
• Even denominator fractional quantum Hall state in bilayer graphene
• Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene
• Interaction-induced insulating state in thick multilayer graphene
• Tunability of the Fractional Quantum Hall States in Buckled Dirac Materials
• Fractional Quantum Hall Effect in Hofstadter Butterflies of Dirac Fermions
• Competing Laughlin state and Wigner crystal in bilayer graphene
• Spin Transitions in Graphene Butterflies at an Integer Filling Factor
• Graphene, Nobel Prize and All that Jazz
• Interaction-driven quantum phase transitions between topological and crystalline orders of electrons