Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions

Abstract

Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances tunnelling magnetoresistance (TMR). A comparative study of the room temperature electron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVx MTJs with 0 <= x <= 0.25 reveals that V doping of the bottom electrode for x < 0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic and magnetic 1/f noise. We attribute the enhanced TMR and suppressed 1/f noise to strongly reduced misfit and dislocation density.

12 pages, 3 figures

References in corpus (2)

• Low relaxation rate in a low-Z alloy of iron
• Very low 1/f noise at room temperature in fully epitaxial Fe/MgO/Fe magnetic tunnel junctions

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• Magnetic-State Controlled Molecular Vibrational Dynamics at Buried Molecular-Metal Interfaces