Impurity states in graphene with intrinsic spin-orbit interaction

Abstract

We consider the problem of electron energy states related to strongly localized potential of a single impurity in graphene. Our model simulates the effect of impurity atom substituting the atom of carbon, on the energy spectrum of electrons near the Dirac point. We take into account the internal spin-orbit interaction, which can modify the structure of electron bands at very small neighborhood of the Dirac point, leading to the energy gap. This makes possible the occurrence of additional impurity states in the vicinity of the gap.

10 pages, 5 figures

References in corpus (11)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Spin-orbit gap of graphene: First-principles calculations
• Band-structure topologies of graphene: spin-orbit coupling effects from first principles
• Disorder Induced Localized States in Graphene
• Modeling disorder in graphene
• Modeling electronic structure and transport properties of graphene with resonant scattering centers
• Electrical Control of the Chemical Bonding of Fluorine on Graphene

Cited by in corpus (8)

• Anderson localization and topological transition in Chern insulators
• Detecting light-induced Floquet band gaps of graphene via trARPES
• In-gap impurity states as the hallmark of the Quantum Spin Hall phase
• Thermoelectric effect enhanced by the resonant states in graphene
• Von Neumann spin measurements with Rashba fields
• Enhanced Majorana bound states in magnetic chains on superconducting topological insulator edges
• Measurement of non-commuting spin components using spin-orbit interaction
• Gap oscillations and Majorana bound states in magnetic chains on superconducting honeycomb lattices