High frequency polarization switching of a thin ferroelectric film

Abstract

We consider both experimentally and analytically the transient oscillatory process that arises when a rapid change in voltage is applied to a $B{a}_{x}S{r}_{1-x}Ti{O}_3$ ferroelectric thin film deposited on an $Mg0$ substrate. High frequency ($\approx 10^{8}rad/s$) polarization oscillations are observed in the ferroelectric sample. These can be understood using a simple field-polarization model. In particular we obtain analytic expressions for the oscillation frequency and the decay time of the polarization fluctuation in terms of the material parameters. These estimations agree well with the experimental results.

References in corpus (2)

• Electromagnetically induced switching of ferroelectric thin films
• Fast Switching Ferroelectric Materials for Accelerator Applications

Cited by in corpus (1)

• Fast control of the reflection of a ferroelectric by an extremely short pulse