Ultrafast (but Many-Body) Relaxation in a Low-Density Electron Glass

Abstract

We present a study of the relaxation dynamics of the photoexcited conductivity of the impurity states in the low-density electronic glass, phosphorous-doped silicon Si:P. Using optical pump-terahertz probe spectroscopy we find strongly temperature and fluence dependent glassy power-law relaxation occurring over sub-ns time scales. Such behavior is in contrast to the much longer time scales found in higher electron density glassy systems. We also find evidence for both multi-particle relaxation mechanisms and/or coupling to electronic collective modes and a low temperature quantum relaxational regime.

arXiv comment4 pages, 4 figures, Appeared in Phys. Rev. Lett

References in corpus (5)

• Single-quasiparticle stability and quasiparticle-pair decay in YBa2Cu3O6.5 (Ortho II)
• Coulomb Gap in a Doped Semiconductor near the Metal-Insulator Transition: Tunneling Experiment and Scaling Ansatz
• The Frequency Dependent Conductivity of Electron Glasses
• Relaxation dynamics in quantum electron-glasses
• Electrodynamics of a Coulomb Glass in n-type Silicon

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