Anisotropic conductivity of doped graphene due to short-range non-symmetric scattering

Abstract

The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetric defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e. doping level), are presented.

3 pages, 2 figures

References in corpus (13)

• The electronic properties of graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Weak localisation magnetoresistance and valley symmetry in graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Modeling disorder in graphene
• Effect of Disorder on Transport in Graphene
• Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons
• Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene
• Voltage and temperature dependencies of conductivity in gated graphene
• Phenomenological study of the electronic transport coefficients of graphene
• Theory of charged impurity scattering in two dimensional graphene
• Zero-bias anomaly in the tunneling density of states of graphene
• On the effect of weak disorder on the density of states in graphene