Numerical approach for retention characteristics of double floating-gate memories

Abstract

We report on a numerical investigation in which memory characteristics of double floating-gate (DFG) structure were compared to those of the conventional single floating-gate structure, including an interference effect between two cells. We found that the advantage of the DFG structure is its longer retention time and the disadvantage is its smaller threshold voltage shift. We also provide an analytical form of charging energy including the interference effect.

4 pages, 4 figures

References in corpus (1)

• Electron transport through double quantum dots

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