Highly sensitive, photon number resolving detectors mediated by phonons using $\delta$-doped GaAs transistors

Abstract

We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon-electron interaction induces a positive conductance in the transistors, resulting in a current increase. With this principle, we obtain an internal quantum efficiency for this type of detector of up to 85%.

arXiv comment15 pages, 5 figures

References in corpus (5)

• Quantum key distribution over 40 dB channel loss using superconducting single photon detectors
• An avalanche-photodiode-based photon-number-resolving detector
• Noise-free high-efficiency photon-number-resolving detectors
• Direct observation of non-classical photon statistics in parametric downconversion
• Phonon-mediated non-equilibrium interaction between nanoscale devices

Cited by in corpus (2)

• High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire
• Ultrafast Optical Switching Using Photonic Molecules in Photonic Crystal Waveguides