Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K

Abstract

We report the growth of potassium-doped BaFe2As2 thin films, where the major charge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by using an ex-situ pulsed laser deposition technique. The measured Tc's are 40 and 39 K for the films grown on Al2O3 and LaAlO3, respectively and diamagnetism indicates that the films have good bulk superconducting properties below 36 and 30 K, respectively. The X-ray diffraction patterns for both films indicated a preferred c-axis orientation, regardless of the substrate structures of LaAlO3 and Al2O3. The upper critical field at zero temperature was estimated to be about 155 T.

6 pages including 3 figures

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Cited by in corpus (13)

• Superconductivity in Iron Compounds
• In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy
• Thin Film Growth and Device Fabrication of Iron-Based Superconductors
• DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films
• Versatile fluoride substrates for Fe-based superconducting thin films
• Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1--xCox)2As2 (AE = alkaline earth)
• Unusually high critical current of clean P-doped BaFe2As2 single crystalline thin film
• Approaching the ultimate superconducting properties of (Ba,K)Fe2As2 by naturally formed low-angle grain boundary networks
• Lessons from Oxypnictide Thin Films
• K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering
• Realization of epitaxial thin films of the superconductor K-doped BaFe${}_{\text{2}}$As${}_{\text{2}}$
• Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2
• Pressure effects on the superconducting thin film Ba${}_{1-x}$K${}_x$Fe${}_2$As${}_2$