A Novel Route for the Inclusion of Metal Dopants in Silicon

Abstract

We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS) show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.

12 pages, 3 figures

References in corpus (4)

• Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
• Molecular Thin Films: a New Type of Magnetic Switch
• Density-functional theory study of half-metallic heterostructures: interstitial Mn in Si
• Optimization of Mn Doping in Group-IV-based Dilute Magnetic Semiconductors by Electronic Co-dopants