Unique Electron Spin Relaxation Induced by Confined Phonons in Nanowire-Based Quantum Dots

Abstract

Electron spin relaxation in nanowire-based quantum dots induced by confined phonons is investigated theoretically. Due to the one-dimensional nature of the confined phonons, the van Hove singularities of the confined phonons and the zero of the form factor of the electron-phonon coupling can lead to unique features of the spin relaxation rate. Extremely strong spin relaxation can be obtained at the van Hove singularity. Meanwhile the spin relaxation rate can also be greatly suppressed at the zero of the form factor. This unique feature indicates the flexibility of nanowire-based quantum dots in the manipulation of spin states. It also offers a way to probe the property of the confined phonons.

arXiv comment4 pages, 2 figures

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Cited by in corpus (4)

• Spin-orbit effects in nanowire-based wurtzite semiconductor quantum dots
• Electric manipulation of electron spin relaxation induced by confined phonons in nanowire-based double quantum dots
• Singlet-triplet relaxation induced by confined phonons in nanowire-based quantum dots
• Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots