Anderson Transition in Disordered Bilayer Graphene

Abstract

Employing the Kernel Polynomial method (KPM), we study the electronic properties of the graphene bilayers in the presence of diagonal disorder, within the tight-binding approximation. The KPM method enables us to calculate local density of states (LDOS) without need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS's at different lattice sites as a criterion to distinguish the localized states from extended ones. We find that bilayer graphene undergoes Anderson metal-insulator transition at a critical value of disorder strength.

References in corpus (21)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Gate-induced insulating state in bilayer graphene devices
• Unconventional Integer Quantum Hall effect in graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• The Kernel Polynomial Method
• Quantum-limited shot noise in graphene
• Landau Level Splitting in Graphene in High Magnetic Fields
• Electron transport in disordered graphene
• Electronic properties of bilayer and multilayer graphene
• Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
• Robust Transport Properties in Graphene
• Ballistic transmission through a graphene bilayer
• Transmission through a biased graphene bilayer barrier
• Notes on the minimal longitudinal dc conductivity of perfect bilayer graphene
• Anderson Transition in Disordered Graphene
• Unusual localisation effects in quantum percolation