Supersymmetry Across Nanoscale Heterojunction

Abstract

We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.

7 pages, 2 figures

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Cited by in corpus (4)

• Exact solution of the position-dependent effective mass and angular frequency Schrödinger equation: harmonic oscillator model with quantized confinement parameter
• Schroedinger equations with indefinite effective mass
• Isochronous oscillator with a singular position-dependent mass and its quantization
• Flatland Position-Dependent-Mass: Polar Coordinates, Separability and Exact Solvability