Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

Abstract

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

7 pages, 4 figures

References in corpus (7)

• Theory of microwave-induced oscillations in the magnetoconductivity of a 2D electron gas
• Mechanisms of the microwave photoconductivity in 2D electron systems with mixed disorder
• Microwave photoconductivity of a 2D electron gas: Mechanisms and their interplay at high radiation power
• Temperature Dependence of Microwave Photoresistance in 2D Electron Systems
• Interference oscillations of microwave photoresistance in double quantum wells
• Resonance oscillations of magnetoresistance in double quantum wells
• Effect of microwave radiation on non-linear resistivity of a two-dimensional electron gas at large filling factors

Cited by in corpus (4)

• Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation
• Microwave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States
• Hall field-induced resistance oscillations in a tunable-density GaAs quantum well
• Radiation-induced magnetoresistance oscillations with massive Dirac fermions