Effective-mass model of surface scattering in locally oxidized Si nanowires
arXiv:1002.0435 · doi:10.1109/ULIS.2009.4897584
Abstract
We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a three-dimensional effective mass equation and apply a quantum transport formalism to calculate the conductance for typical potential profiles. Comparison of our results with hole-transport calculations using atomistic models in conjunction with density functional theory (DFT) points to an intra-subband scattering mechanism from a potential well.
presented at the 10th International Conference on Ultimate Integration of Silicon, 2009 (ULIS 2009)