Inelastic scattering and heating in a molecular spin pump
arXiv:1001.3677 · doi:10.1103/PhysRevB.81.075311
Abstract
We consider a model for a spin field-effect molecular transistor, where a directed pure spin current is controlled by an external electric field. Inelastic scattering effects of such molecular device are discussed within a framework of full counting statistics for a multi-level molecular system. We propose that the heating of the molecular junction can be controlled by external electric and magnetic fields. Characteristic features of the model are demonstrated by numerical calculations.
9 pages, 5 figures
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- Vibrational cooling, heating, and instability in molecular conducting junctions: Full counting statistics analysis
- Path-integral simulations with fermionic and bosonic reservoirs: Transport and dissipation in molecular electronic junctions
- Efficiency fluctuations in quantum thermoelectric devices
- Numerically exact full counting statistics of the nonequilibrium Anderson impurity model
- Green's function methods for single molecule junctions
- A self-consistent quantum master equation approach to molecular transport
- Current noise in molecular junctions: effects of the electron-phonon interaction
- Charge and spin pumping through a double quantum dot
- Full counting statistics for electron transport in periodically driven quantum dots
- Theory of spin pumping through an interacting quantum dot tunnel coupled to a ferromagnet with time-dependent magnetization
- Spin backflow: a non-Markovian effect on spin pumping
- Thermally induced charge current through long molecules
- Nonadiabaticity in spin pumping under relaxation
- Electronically Mediated Magnetic Anisotropy in Vibrating Magnetic Molecules
- Spin transport through a nanojunction with a precessing anisotropic molecular spin: Quantum interference and spin-transfer torque