The calculus of the electric potential and field intensity in multiple electrodes lateral tunneling transistors with double gate
arXiv:0912.2878
Abstract
The paper presents an adaptive over-relaxation method for calculating the electric potential and field intensity, for a complex tunnel transistor structure involving a split gate and a shielding boundary. The accuracy and speed of the method has been numerically tested and found satisfactory for the study of such devices by calculating the tunneling currents for the obtained potential distribution.
arXiv comment10 pages, 6 figures,