Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon

Abstract

Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.

accepted for publication on epl

References in corpus (7)

• Magnetic properties of submicron Co islands and their use as artificial pinning centers
• Vortex rectification effects in films with periodic asymmetric pinning
• Superconducting Transition and Vortex Pinning in Nb Films Patterned with Nano-scale Hole-arrays
• Guided vortex motion in superconductors with a square antidot lattice
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• Enhanced vortex pinning by a composite antidot lattice in a superconducting Pb film
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Cited by in corpus (3)

• Quantum phase slips in superconducting Nb nanowire networks deposited on self-assembled Si templates
• Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks
• Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates