Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

Abstract

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.

5 pages, 3 figures

References in corpus (8)

• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Emergence of the persistent spin helix in semiconductor quantum wells
• Suppression of Spin Relaxation in Submicron InGaAs Wires
• Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
• Ballistic Spin Resonance
• Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
• Spin-dephasing anisotropy for electrons in a diffusive quasi-1D GaAs wire
• Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs Schottky barrier

Cited by in corpus (6)

• Spin dynamics in semiconductors
• Persistent Spin Textures in Semiconductor Nanostructures
• Suppressed decay of a laterally confined persistent spin helix
• Tuning of the spin-orbit interaction in a quantum dot by an in-plane magnetic field
• Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system
• Vortex patterns in a superconducting-ferromagnetic rod