Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing
arXiv:0908.3181 · doi:10.1021/nl904280q
Abstract
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high temperatures, where the a-Si:H resistance is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows us to probe both the field effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.
arXiv comment4 pages, 4 figures
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