Size dependent thermoelectric properties of silicon nanowires

Abstract

By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the electrical conductivity increases slowly, while the Seebeck coefficient reduces remarkably. This leads to a quick reduction of cooling power factor with diameter. Moreover, the figure of merit also decreases with transverse size. Our results demonstrate that in thermoelectric application, NW with small diameter is preferred. We also predict that isotopic doping can increase the value of ZT significantly. With 50% 29Si doping (28Si0.529Si0.5 NW), the ZT can be increased by 31%.

13 pages, 4 figures

References in corpus (2)

• Size-dependent thermal conductivity of nanoscale semiconducting systems
• Silicon nanowire band gap modification

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