Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films

Abstract

We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10-6 cm2/V?s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminium organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.

Cited by in corpus (9)

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• Statistical analysis of spin switching in coupled spin-crossover molecules
• Design and processing as ultrathin films of a sublimable Iron(II) spin crossover material exhibiting efficient and fast light-induced spin transition
• Sublimable complexes with spin switching: Chemical design, processing as thin films and integration in graphene-based devices
• Electric-field control of spin transitions in molecular compounds
• Femtosecond spin-state switching dynamics of spin-crossover molecules condensed in thin films
• Electrical sensing of the thermal and light induced spin transition in robust contactless spin-crossover/graphene hybrid devices