Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

Abstract

We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaVO${}_3$ (LVO) and capping LaAlO${}_3$ (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V${}^{4+}$ in the bulk of the thicker LVO layers.

11 pages, 4 figures