Carbon nanotubes on partially depassivated n-doped Si(100)-(2x1):H substrates

Abstract

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room-temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si(100)-(2x1):H with hydrogen-depassivated stripes up to 100 Angstrom wide are ascertained from both experiment and theory. The results presented here point towards novel and local functionalities of nanotube-semiconductor interfaces.

5 pages, 3 Figures, 1 Table. Accepted for publication in Physical Review B

References in corpus (4)

• The SIESTA method for ab initio order-N materials simulation
• Efficient index handling of multidimensional periodic boundary conditions
• Van der Waals Density Functional for General Geometries
• Ab initio study of semiconducting carbon nanotubes adsorbed on the Si(100) surface: diameter- and registration-dependent atomic configurations and electronic properties

Cited by in corpus (1)

• Preserving the 7x7 surface reconstruction of clean Si(111) by graphene adsorption