Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As

Abstract

Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization.

9 pages, 3 figs, subm to PRB

References in corpus (8)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Semiclassical theories of the anomalous Hall effect
• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Anisotropic Magnetoresistance components in (Ga,Mn)As
• Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
• Semiclassical framework for the calculation of transport anisotropies
• Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
• Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

Cited by in corpus (1)

• Nonvanishing anisotropic magnetoresistance in Rashba two-dimensional electron systems with nonmagnetic disorders