Tailoring exchange bias in half-metallic LaSrMnO thin films for spin-valve applications
arXiv:0904.4092 · doi:10.1063/1.3139770
Abstract
We have utilized the antiferromagnetic nature and structural/chemical compatibility of LaSrMnO with highly spin polarized LaSrMnO to prepare epitaxial exchange bias couples. A robust exchange bias (EB) shift of magnetization hysteresis with associated interfacial exchange energy J 0.13 erg/cm at 10 K along with enhanced coercivity are reported. The EB effect was engineered to bring coercivity contrast between LaSrMnO and cobalt films in LaSrMnO/LaSrMnO/SrTiO/Co magnetic tunnel junctions.
10 pages, 4 figures
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