Universal Scaling of Nonequilibrium Transport in the Kondo Regime of Single Molecule Devices

Abstract

Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor (SMT) devices in the Kondo regime. The conductance at low bias and temperature adheres to a scaling function characterized by two parameters. This result, analogous to that reported recently in semiconductor dots with Kondo temperatures two orders of magnitude lower, demonstrates the universality of this scaling form. We compare the extracted values of the scaling coefficients to previous experimental and theoretical results.

4.5 pages, 3 figures

References in corpus (6)

• The Kondo effect in C${}_{60}$ single-molecule transistors
• Inelastic electron tunneling via molecular vibrations in single-molecule transistors
• Kondo effect in quantum dots
• Tuning the Kondo effect with a mechanically controllable break junction
• Kondo resonances and anomalous gate dependence of electronic conduction in single-molecule transistors
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Cited by in corpus (1)

• Real-time simulations of nonequilibrium transport in the single-impurity Anderson model