Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band

Abstract

We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.

References in corpus (3)

• Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal
• Manipulation of the Spontaneous Emission Dynamics of Quantum Dots in 2D Photonic Crystals
• Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

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• High finesse microcavities in the optical telecom O-band