Molecular electronics at Metal / Semiconductor Junctions Si inversion by Sub-nm Molecular Films

Abstract

Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier-dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission and, as such is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.

References in corpus (1)

• How do electronic carriers cross Si-bound alkyl monolayers?

Cited by in corpus (4)

• Molecular Electronics by Chemical Modification of Semiconductor Surfaces
• Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level
• Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon
• Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(001)