Disorder-induced pseudodiffusive transport in graphene nanoribbons

Abstract

We study the transition from ballistic to diffusive and localized transport in graphene nanoribbons in the presence of binary disorder, which can be generated by chemical adsorbates or substitutional doping. We show that the interplay between the induced average doping (arising from the non-zero average of the disorder) and impurity scattering modifies the traditional picture of phase-coherent transport. Close to the Dirac point, intrinsic evanescent modes produced by the impurities dominate transport at short lengths, giving rise to a new regime analogous to pseudodiffusive transport in clean graphene, but without the requirement of heavily doped contacts. This intrinsic pseudodiffusive regime precedes the traditional ballistic, diffusive and localized regimes. The last two regimes exhibit a strongly modified effective number of propagating modes, and a mean free path which becomes anomalously large close to the Dirac point.

Published version, 5 pages, 5 figures

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Cited by in corpus (5)

• Electronic transport in two dimensional graphene
• Transition from ballistic to diffusive behavior of graphene ribbons in the presence of warping and charged impurities
• Direct momentum-resolved observation of one-dimensional confinement of externally doped electrons within a single subnanometre-scale wire
• Electronic transport in graphene nanoribbons with sublattice-asymmetric doping
• Pseudodiffusive transmission of nodal Dirac fermions through a clean d-wave superconductor