Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3

Abstract

We report pulsed as well as direct current/voltage induced electroresistance in Bi0.8Sr0.2MnO3 at room temperature. It is shown that bi-level and multi-level resistivity switching can be induced by a sequence of pulses of varying pulse width at fixed voltage amplitude. Resistivity increases abruptly (= 55 % at 300 K) upon reducing pulse width from 100 ms to 25 ms for a fixed electric field (E = 2 V/cm2) of 200 ms pulse period. The resistivity switching is accompanied by a periodic change in temperature which alone can not explain the magnitude of the resistivity change.

12 pages, 3 figures

References in corpus (7)

• Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr${}_{0.7}$Ca${}_{0.3}$MnO${}_3$ interface
• Field-Driven Hysteretic and Reversible Resistive Switch at the Ag-Pr0.7Ca0.3MnO3 Interface
• Non-linear conduction in charge-ordered Pr${}_{0.63}$ Ca${}_{0.37}$ MnO${}_3$ : Effect of magnetic fields
• Current localization and Joule self-heating effects in Cr doped Nd0.5Ca0.5MnO3 manganites
• Non-linear electrical response in a charge/orbital ordered ${\mathrm{Pr}}_{0.63}$Ca${}_{0.37}$MnO${}_3$ crystal : the charge density wave analogy
• Multivalued memory effects in electronic phase-change manganites controlled by Joule heating
• Localized reversible nanoscale phase separation in Pr_0.63Ca_0.37MnO_3 single crystal using a scanning tunneling microscope tip