Interacting antiferromagnetic and ferroelectric domain structures
arXiv:0901.1369 · doi:10.1002/pssr.200802282
Abstract
The correlation between antiferromagnetic and ferroelectric domain structures in multiferroics has been studied. The role of magnetoelectric interactions in a formation of antiferromagnetic domain structure has been analysed. It has been shown the major physical mechanism binding antiferromagnetic domains to ferroelectrics ones is inhomogeneous flexomagnetoelectric interaction of the Pz((lgrad)lz-lz(divl)) type. The dependences illustrating rearrangement of antiferromagnetic domain pattern together with change of ferroelectric domains thickness has been performed.
4 pages, 4 figures
References in corpus (5)
- Electric-field-induced spin-flop in BiFeO3 single crystals at room-temperature
- Fractal dimension and size scaling of domains in thin films of multiferroic BiFeO3
- Structural distortion and magnetism of BiFeO3 epitaxial thin films: a Raman spectroscopy and neutron diffraction study
- Phase transitions in multiferroic BiFeO3 crystals, thin-layers, and ceramics: Enduring potential for a single phase, room-temperature magnetoelectric 'holy grail'
- Universality of the Scaling Law for Ferroic Domains
Cited by in corpus (6)
- Symmetry Theory of the Flexomagnetoelectric Effect in the Magnetic Domain Walls
- Pinning of magnetic domain walls in multiferroics
- Simulation of the Magnetization Dynamics of a Single Domain BiFeO Thin Film
- On the theory of magnetization in multiferroics: competition between ferro- and antiferromagnetic domains
- The pseudoatomic orbital basis: electronic accuracy and soft-mode distortions in ABO perovskites
- Flexomagnetoelectric Interaction in Cubic, Tetragonal and Orthorhombic Crystals