Defect Induced Photoluminescence from Dark Excitonic States in Individual Single-Walled Carbon Nanotubes

Abstract

We show that new low-energy photoluminescence (PL) bands can be created in semiconducting single-walled carbon nanotubes by intense pulsed excitation. The new bands are attributed to PL from different nominally dark excitons that are "brightened" due to defect-induced mixing of states with different parity and/or spin. Time-resolved PL studies on single nanotubes reveal a significant reduction of the bright exciton lifetime upon brightening of the dark excitons. The lowest energy dark state has longer lifetimes and is not in thermal equilibrium with the bright state.

arXiv comment4 pages, 3 figures

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Cited by in corpus (9)

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• Strong Light-Matter Coupling in Carbon Nanotubes as a Route to Exciton Brightening
• Chirality Dependence of the $K$-Momentum Dark Excitons in Carbon Nanotubes
• Interband transitions in narrow-gap carbon nanotubes and graphene nanoribbons
• Experimental determination of the local optical conductivity of a semiconducting carbon nanotube and its modification at individual defects
• Optical properties of graphene quantum dots: the role of chiral symmetry
• Triplet excitations in carbon nanostructures
• Electroluminescence and thermal radiation from metallic carbon nanotubes with defects